230B9702
SK150MB120RM04TE1-M05
SEMITOP E1, HPTP
230B9702
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 139 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E1 |
| Abmessungen (LxBxH) | 63x34x12 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Features | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.022 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HPTP |
| Varianten Beschreibung | The SK150MB120RM04TE1-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Varianten Kurzbeschreibung | Module + High Performance Thermal Paste (HPTP) |
| Variants | <a href="/de-de/products/p/sk150mb120rm04te1-m07-230b6988">SK150MB120RM04TE1-M07</a><a href="/de-de/products/p/sk150mb120rm04te1-m05-230b9702">SK150MB120RM04TE1-M05</a><a href="/de-de/products/p/sk150mb120rm04te1-24923550">SK150MB120RM04TE1</a> |