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24923540VM07

SK100MH120RM04ETE2-M07

SEMITOP E2, HP-PCM

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production New
HerkunftslandItaly
Stromstärke (A)99 A
Spannung1200 V
TopologieH-Bridge
ProduktlinieSEMITOP
GehäuseSEMITOP E2
Abmessungen (LxBxH)63x57x12
TechnologieSiC MOSFET
Chip TechnologieGen 4 SiC MOSFET (RM)
EigenschaftenOptimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typische AnwendungsgebieteElectric Vehicle chargingEnergy Storage SystemsSolarUPS

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.058 Kilogramm
Nettogewicht0.038 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SK100MH120RM04ETE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/sk100mh120rm04ete2-m05-24923540vm05">SK100MH120RM04ETE2-M05</a><a href="/products/p/sk100mh120rm04ete2-m07-24923540vm07">SK100MH120RM04ETE2-M07</a><a href="/products/p/sk100mh120rm04ete2-24923540">SK100MH120RM04ETE2</a>