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24923530VM07

SK100MH120RM04ETE1-M07

SEMITOP E1, HP-PCM

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production New
HerkunftslandItaly
Stromstärke (A)89 A
Spannung1200 V
TopologieH-Bridge
ProduktlinieSEMITOP
GehäuseSEMITOP E1
Abmessungen (LxBxH)63x34x12
TechnologieSiC MOSFET
Chip TechnologieGen 4 SiC MOSFET (RM)
EigenschaftenOptimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typische AnwendungsgebieteElectric Vehicle chargingEnergy Storage SystemsSolarUPS

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.022 Kilogramm
Nettogewicht0.022 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SK100MH120RM04ETE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/sk100mh120rm04ete1-m05-24923530vm05">SK100MH120RM04ETE1-M05</a><a href="/products/p/sk100mh120rm04ete1-m07-24923530vm07">SK100MH120RM04ETE1-M07</a><a href="/products/p/sk100mh120rm04ete1-24923530">SK100MH120RM04ETE1</a>