24923530VM05
SK100MH120RM04ETE1-M05
SEMITOP E1, HPTP
24923530VM05
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 89 A |
| Spannung | 1200 V |
| Topologie | H-Bridge |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E1 |
| Abmessungen (LxBxH) | 63x34x12 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Eigenschaften | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Electric Vehicle chargingEnergy Storage SystemsSolarUPS |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.022 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HPTP |
| Varianten Beschreibung | The SK100MH120RM04ETE1-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Varianten Kurzbeschreibung | Module + High Performance Thermal Paste (HPTP) |
| Variants | <a href="/products/p/sk100mh120rm04ete1-m05-24923530vm05">SK100MH120RM04ETE1-M05</a><a href="/products/p/sk100mh120rm04ete1-m07-24923530vm07">SK100MH120RM04ETE1-M07</a><a href="/products/p/sk100mh120rm04ete1-24923530">SK100MH120RM04ETE1</a> |