24915850VM01
SK 35 GAL 12T4-M01
SEMITOP 2, Wacker P12
24915850VM01
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 41x28x12 |
| Chip Technologie | IGBT 4 (Trench) |
| Eigenschaften | Compact designOne screw mountingHeat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB)High short circuit capabilityTrench4 IGBT technologyCAL4F diode technologyV<sub>CE,sat</sub> with positive coefficientUL recognized, file no. E 63 532 |
| Gehäuse | SEMITOP 2 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | In Production |
| Spannung | 1200 V |
| Stromstärke (A) | 35 A |
| Technologie | IGBT |
| Topologie | Chopper/Booster |
| Typische Anwendungsgebiete | InverterMotor drive |
| Variante | Wacker P12 |
| Varianten Beschreibung | The SK 35 GAL 12T4-M01 is a 1200 V IGBT module and comes with pre-applied thermal paste Wacker P12 (λ=0.8 W/mK). Wacker P12 is a silicone-based thermal paste with optimized thickness and honeycomb print, enhancing heat dissipation. |
| Varianten Kurzbeschreibung | Module + Thermal Paste Wacker P12 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.027 Kilogramm |
| Nettogewicht | 0.021 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |