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27897102VM07

SEMiX703GB12M7I20p-M07

SEMiX 3p shunt, HP-PCM

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production New
HerkunftslandSlovakia
Stromstärke (A)700 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMiX
GehäuseSEMiX 3p shunt
Abmessungen (LxBxH)150x62x17
TechnologieIGBT
Chip TechnologieIGBT M7
EigenschaftenHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh overload capabilityLow loss high density IGBTsPress-fit pins as auxiliary contactsUL recognized, file no. E63532
Typische AnwendungsgebieteAC inverter drivesUPSRenewable energy systems

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.381 Kilogramm
Nettogewicht0.35 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SEMiX703GB12M7I20p-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/de-de/products/p/semix703gb12m7i20p-m04-27897102vm04">SEMiX703GB12M7I20p-M04</a><a href="/de-de/products/p/semix703gb12m7i20p-m06-27897102vm06">SEMiX703GB12M7I20p-M06</a><a href="/de-de/products/p/semix703gb12m7i20p-m07-27897102vm07">SEMiX703GB12M7I20p-M07</a><a href="/de-de/products/p/semix703gb12m7i20p-27897102">SEMiX703GB12M7I20p</a>