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27895300VM06

SEMiX603GB12E4SiCp-M06

SEMiX 3p, HALA HT

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandSlovakia
Stromstärke (A)600 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMiX
GehäuseSEMiX 3p
Abmessungen (LxBxH)150x62x17
TechnologieHybrid SiC
Chip TechnologieSiC Diode + IGBT 4 (Trench)
EigenschaftenWith Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532
Typische AnwendungsgebieteAC inverter drivesUPSRenewable energy systems

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.381 Kilogramm
Nettogewicht0.35 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHALA HT
Varianten BeschreibungThe SEMiX603GB12E4SiCp-M06 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA HT (λ=3.0 W/mK). HALA HT is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + Phase Change Material HALA HT
Variants<a href="/de-de/products/p/semix603gb12e4sicp-m04-27895300vm04">SEMiX603GB12E4SiCp-M04</a><a href="/de-de/products/p/semix603gb12e4sicp-m06-27895300vm06">SEMiX603GB12E4SiCp-M06</a><a href="/de-de/products/p/semix603gb12e4sicp-m07-27895300vm07">SEMiX603GB12E4SiCp-M07</a><a href="/de-de/products/p/semix603gb12e4sicp-27895300">SEMiX603GB12E4SiCp</a>