27895300
SEMiX603GB12E4SiCp
SEMiX 3p
27895300
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production |
| Herkunftsland | Slovakia |
| Stromstärke (A) | 600 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMiX |
| Gehäuse | SEMiX 3p |
| Abmessungen (LxBxH) | 150x62x17 |
| Technologie | Hybrid SiC |
| Chip Technologie | SiC Diode + IGBT 4 (Trench) |
| Features | With Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532 |
| Typische Anwendungsgebiete | AC inverter drivesUPSRenewable energy systems |
| Ehemalige Teilenummer | 27895300 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.381 Kilogramm |
| Nettogewicht | 0.35 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | No accessory |
| Varianten Beschreibung | The SEMiX603GB12E4SiCp is a 1200 V Hybrid SiC module and comes as bare module without pre-applied thermal interface material or lid, ideal for custom assembly processes. |
| Varianten Kurzbeschreibung | Bare module without pre-applied TIM or lid |
| Variants | <a href="/de-de/products/p/semix603gb12e4sicp-m04-27895300vm04">SEMiX603GB12E4SiCp-M04</a><a href="/de-de/products/p/semix603gb12e4sicp-m06-27895300vm06">SEMiX603GB12E4SiCp-M06</a><a href="/de-de/products/p/semix603gb12e4sicp-m07-27895300vm07">SEMiX603GB12E4SiCp-M07</a><a href="/de-de/products/p/semix603gb12e4sicp-27895300">SEMiX603GB12E4SiCp</a> |