27897000VM04
SEMiX603GB12E4Ip-M04
SEMiX 3p shunt, HALA P8
27897000VM04
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production |
| Herkunftsland | Slovakia |
| Stromstärke (A) | 600 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMiX |
| Gehäuse | SEMiX 3p shunt |
| Abmessungen (LxBxH) | 150x62x17 |
| Technologie | IGBT |
| Chip Technologie | IGBT 4 (Trench) |
| Eigenschaften | Homogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh short circuit capabilityPress-fit pins as auxiliary contactsThermally optimized ceramicCurrent sensing shunt resistorUL recognized, file no. E63532 |
| Typische Anwendungsgebiete | AC inverter drivesUPSRenewable energy systems |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.381 Kilogramm |
| Nettogewicht | 0.35 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HALA P8 |
| Varianten Beschreibung | The SEMiX603GB12E4Ip-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Varianten Kurzbeschreibung | Module + Phase Change Material HALA P8 |
| Variants | <a href="/de-de/products/p/semix603gb12e4ip-m04-27897000vm04">SEMiX603GB12E4Ip-M04</a><a href="/de-de/products/p/semix603gb12e4ip-m06-27897000vm06">SEMiX603GB12E4Ip-M06</a><a href="/de-de/products/p/semix603gb12e4ip-m07-27897000vm07">SEMiX603GB12E4Ip-M07</a><a href="/de-de/products/p/semix603gb12e4ip-27897000">SEMiX603GB12E4Ip</a> |