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27895040VM07

SEMiX603GAR12E4p-M07

SEMiX 3p, HP-PCM

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandSlovakia
Stromstärke (A)600 A
Spannung1200 V
TopologieChopper/Booster
ProduktlinieSEMiX
GehäuseSEMiX 3p
Abmessungen (LxBxH)150x62x17
TechnologieIGBT
Chip TechnologieIGBT 4 (Trench)
EigenschaftenHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh short circuit capabilityPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532
Typische AnwendungsgebieteAC inverter drivesUPSRenewable energy systems

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.381 Kilogramm
Nettogewicht0.35 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SEMiX603GAR12E4p-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/de-de/products/p/semix603gar12e4p-m04-27895040vm04">SEMiX603GAR12E4p-M04</a><a href="/de-de/products/p/semix603gar12e4p-m06-27895040vm06">SEMiX603GAR12E4p-M06</a><a href="/de-de/products/p/semix603gar12e4p-m07-27895040vm07">SEMiX603GAR12E4p-M07</a><a href="/de-de/products/p/semix603gar12e4p-27895040">SEMiX603GAR12E4p</a>