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27895020VM04

SEMiX603GAL12E4p-M04

SEMiX 3p, HALA P8

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandSlovakia
Stromstärke (A)600 A
Spannung1200 V
TopologieChopper/Booster
ProduktlinieSEMiX
GehäuseSEMiX 3p
Abmessungen (LxBxH)150x62x17
TechnologieIGBT
Chip TechnologieIGBT 4 (Trench)
EigenschaftenHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh short circuit capabilityPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532
Typische AnwendungsgebieteAC inverter drivesUPSRenewable energy systems

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.381 Kilogramm
Nettogewicht0.35 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHALA P8
Varianten BeschreibungThe SEMiX603GAL12E4p-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + Phase Change Material HALA P8
Variants<a href="/de-de/products/p/semix603gal12e4p-m04-27895020vm04">SEMiX603GAL12E4p-M04</a><a href="/de-de/products/p/semix603gal12e4p-m06-27895020vm06">SEMiX603GAL12E4p-M06</a><a href="/de-de/products/p/semix603gal12e4p-m07-27895020vm07">SEMiX603GAL12E4p-M07</a><a href="/de-de/products/p/semix603gal12e4p-27895020">SEMiX603GAL12E4p</a>