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27897103VM04

SEMiX523GB12M7I26p-M04

SEMiX 3p shunt, HALA P8

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)150x62x17
Chip TechnologieIGBT M7
EigenschaftenHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh overload capabilityLow loss high density IGBTsPress-fit pins as auxiliary contactsUL recognized, file no. E63532
GehäuseSEMiX 3p shunt
HerkunftslandSlovakia
ProduktlinieSEMiX
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)525 A
TechnologieIGBT
TopologieHalf-Bridge
Typische AnwendungsgebieteAC inverter drivesUPSRenewable energy systems
VarianteHALA P8
Varianten BeschreibungThe SEMiX523GB12M7I26p-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Varianten KurzbeschreibungModule + Phase Change Material HALA P8

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.381 Kilogramm
Nettogewicht0.35 Kilogramm
Proposition 65Cancer and Reproductive Harm