
27897007VM07
SEMiX303GB12E4I50p-M07
SEMiX 3p shunt, HP-PCM
27897007VM07
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 150x62x17 |
| Chip Technologie | IGBT 4 (Trench) |
| Eigenschaften | Homogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh short circuit capabilityPress-fit pins as auxiliary contactsCurrent sensing shunt resistorUL recognized, file no. E63532 |
| Gehäuse | SEMiX 3p shunt |
| Herkunftsland | Slovakia |
| Produktlinie | SEMiX |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 300 A |
| Technologie | IGBT |
| Topologie | Half-Bridge |
| Typische Anwendungsgebiete | AC inverter drivesUPSRenewable energy systems |
| Variante | HP-PCM |
| Varianten Beschreibung | The SEMiX303GB12E4I50p-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Varianten Kurzbeschreibung | Module + High Performance Phase Change Material (HP-PCM) |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.381 Kilogramm |
| Nettogewicht | 0.35 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |