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27890120VM05

SEMiX302GB12E4s-M05

SEMiX 2s, HPTP

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandSlovakia
Stromstärke (A)300 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMiX
GehäuseSEMiX 2s
Abmessungen (LxBxH)117x64x17
TechnologieIGBT
Chip TechnologieIGBT 4 (Trench)
EigenschaftenHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh short circuit capabilityUL recognized, file no. E63532
Typische AnwendungsgebieteMotor DrivesPower SupplyMatrix Converter

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.279 Kilogramm
Nettogewicht0.24 Kilogramm

Variant information

Eigenschaften
Wert
VarianteHPTP
Varianten BeschreibungThe SEMiX302GB12E4s-M05 is a 1200 V IGBT module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime.
Varianten KurzbeschreibungModule + High Performance Thermal Paste (HPTP)
Variants<a href="/de-de/products/p/semix302gb12e4s-m04-27890120vm04">SEMiX302GB12E4s-M04</a><a href="/de-de/products/p/semix302gb12e4s-m05-27890120vm05">SEMiX302GB12E4s-M05</a><a href="/de-de/products/p/semix302gb12e4s-m06-27890120vm06">SEMiX302GB12E4s-M06</a><a href="/de-de/products/p/semix302gb12e4s-m07-27890120vm07">SEMiX302GB12E4s-M07</a><a href="/de-de/products/p/semix302gb12e4s-27890120">SEMiX302GB12E4s</a>