27922500VM07

SEMiX205BT07F3SC4-M07

SEMiX 5p, HP-PCM

Eigenschaften	Wert
Abmessungen (LxBxH)	130x70x17
Chip Technologie	SiC Diode + IGBT 3 (Trench)
Eigenschaften	Solderless assembling solution with PressFIT signal pins and screw power terminalsIGBT 3 High Speed Trench TechnologySilicon Carbide (SiC) Free-wheeling Schottky diodes : Diode 1 (D1…D4)Silicon anti-parallel diodes , Diode 2 (D5…D8)V<sub>CE(sat) </sub>with positive temperature coefficientLow inductance caseReliable mechanical design with injection moulded terminals and reliable internal connectionsUL recognized file no. E63532NTC temperature sensor inside
Gehäuse	SEMiX 5p
Herkunftsland	Italy
Produktlinie	SEMiX
Produktstatus	In Production New
Spannung	650 V
Stromstärke (A)	200 A
Technologie	Hybrid SiC
Topologie	3-Level
Typ	SEMiX 5p
Typische Anwendungsgebiete	High Frequency Resonant ConverterInterleaved Active RectifierUPS
Variante	HP-PCM
Varianten Beschreibung	The SEMiX205BT07F3SC4-M07 is a 650 V Hybrid SiC module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.
Varianten Kurzbeschreibung	Module + High Performance Phase Change Material (HP-PCM)

Eigenschaften	Wert
Bruttogewicht	0.475 Kilogramm
Nettogewicht	0.39 Kilogramm