27922500VM07
SEMiX205BT07F3SC4-M07
SEMiX 5p
27922500VM07
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 130x70x17 |
| Chip Technologie | SiC Diode + IGBT 3 (Trench) |
| Eigenschaften | Solderless assembling solution with PressFIT signal pins and screw power terminalsIGBT 3 High Speed Trench TechnologySilicon Carbide (SiC) Free-wheeling Schottky diodes : Diode 1 (D1…D4)Silicon anti-parallel diodes , Diode 2 (D5…D8)V<sub>CE(sat) </sub>with positive temperature coefficientLow inductance caseReliable mechanical design with injection moulded terminals and reliable internal connectionsUL recognized file no. E63532NTC temperature sensor inside |
| Gehäuse | SEMiX 5p |
| Herkunftsland | Italy |
| Produktlinie | SEMiX |
| Produktstatus | In Production New |
| Spannung | 650 V |
| Stromstärke (A) | 200 A |
| Technologie | Hybrid SiC |
| Topologie | 3-Level |
| Type | SEMiX 5p |
| Typische Anwendungsgebiete | High Frequency Resonant ConverterInterleaved Active RectifierUPS |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.475 Kilogramm |
| Nettogewicht | 0.39 Kilogramm |