22892220VM04
SKM200GB12T4SiC2-M04
SEMITRANS 3, HALA P8
22892220VM04
产品规格
特性 | 值 |
|---|---|
| 产品状态 | In Production New |
| 原产地 | Slovakia |
| 电流 | 200 A |
| 电压 | 1200 V |
| 拓扑 | Half-Bridge |
| 产品线 | SEMITRANS |
| 外壳 | SEMITRANS 3 |
| 尺寸 | 106x62x31 |
| 技术 | Hybrid SiC |
| 芯片技术 | SiC Diode + IGBT 4 (Trench) |
| 特性 | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| 典型应用 | AC inverter drivesUPSElectronic weldersDC/DC converters |
| 变体 | HALA P8 |
一般规格
特性 | 值 |
|---|---|
| 毛重 | 0.32 千克 |
| 净重 | 0.31 千克 |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
特性 | 值 |
|---|---|
| Variants | <a href="/products/p/skm200gb12t4sic2-m04-22892220vm04">SKM200GB12T4SiC2-M04</a> |
| 产品变体介绍 | The SKM200GB12T4SiC2-M04 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| 产品变体简要介绍 | Module + Phase Change Material HALA P8 |