22892220
SKM200GB12T4SiC2
SEMITRANS 3
22892220
产品规格
特性 | 值 |
|---|---|
| 产品状态 | In Production New |
| 原产地 | Slovakia |
| 电流 | 200 A |
| 电压 | 1200 V |
| 拓扑 | Half-Bridge |
| 产品线 | SEMITRANS |
| 外壳 | SEMITRANS 3 |
| 尺寸 | 106x62x31 |
| 技术 | Hybrid SiC |
| 芯片技术 | SiC Diode + IGBT 4 (Trench) |
| 特性 | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| 典型应用 | AC inverter drivesUPSElectronic weldersDC/DC converters |
| 原料号 | 22892220 |
一般规格
特性 | 值 |
|---|---|
| 毛重 | 0.32 千克 |
| 净重 | 0.31 千克 |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
特性 | 值 |
|---|---|
| Variants | <a href="/products/p/skm200gb12t4sic2-m04-22892220vm04">SKM200GB12T4SiC2-M04</a> |