24923770
SK50MH120RM04ETE1
SEMITOP E1
24923770
产品规格
特性 | 值 |
|---|---|
| 产品状态 | In Production New |
| 原产地 | Italy |
| 电流 | 49 A |
| 电压 | 1200 V |
| 拓扑 | H-Bridge |
| 产品线 | SEMITOP |
| 外壳 | SEMITOP E1 |
| 尺寸 | 63x34x12 |
| 技术 | SiC MOSFET |
| 芯片技术 | Gen 4 SiC MOSFET (RM) |
| 特性 | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| 典型应用 | Electric Vehicle chargingEnergy Storage SystemsSolarUPS |
| 原料号 | 24923770 |
一般规格
特性 | 值 |
|---|---|
| 毛重 | 0.037 千克 |
| 净重 | 0.022 千克 |
| Proposition 65 | Cancer and Reproductive Harm |