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24922580VM07

SK200MB120CR03TE2-M07

SEMITOP E2, HP-PCM

产品规格

特性
产品状态In Production New
原产地Italy
电流223 A
电压1200 V
拓扑Half-Bridge
产品线SEMITOP
外壳SEMITOP E2
尺寸63x57x12
技术SiC MOSFET
芯片技术Gen 3 SiC MOSFET (WS)
特性Optimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives
变体HP-PCM

一般规格

特性
毛重0.058 千克
净重0.038 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk200mb120cr03te2-m05-24922580vm05">SK200MB120CR03TE2-M05</a><a href="/products/p/sk200mb120cr03te2-m07-24922580vm07">SK200MB120CR03TE2-M07</a>
产品变体介绍The SK200MB120CR03TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.
产品变体简要介绍Module + High Performance Phase Change Material (HP-PCM)