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24922580

SK200MB120CR03TE2

SEMITOP E2

产品规格

特性
产品状态In Production New
原产地Italy
电流223 A
电压1200 V
拓扑Half-Bridge
产品线SEMITOP
外壳SEMITOP E2
尺寸63x57x12
技术SiC MOSFET
芯片技术Gen 3 SiC MOSFET (WS)
特性Optimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives
原料号24922580

一般规格

特性
毛重0.058 千克
净重0.038 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk200mb120cr03te2-m05-24922580vm05">SK200MB120CR03TE2-M05</a><a href="/products/p/sk200mb120cr03te2-m07-24922580vm07">SK200MB120CR03TE2-M07</a>