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24923790

SK10DGDL12RAETE1

SEMITOP E1

产品规格

特性
产品状态In Production New
原产地Italy
电流10 A
电压1200 V
拓扑CIB
产品线SEMITOP
外壳SEMITOP E1
尺寸63x34x12
技术IGBT
芯片技术RGA
特性Optimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V RGA IGBT (RA)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Motor drivesAir conditioningAuxiliary Inverters
原料号24923790

一般规格

特性
毛重0.037 千克
净重0.022 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk10dgdl12raete1-m07-24923790vm07">SK10DGDL12RAETE1-M07</a>