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24923540VM05

SK100MH120RM04ETE2-M05

SEMITOP E2, HPTP

产品规格

特性
产品状态In Production New
原产地Italy
电流99 A
电压1200 V
拓扑H-Bridge
产品线SEMITOP
外壳SEMITOP E2
尺寸63x57x12
技术SiC MOSFET
芯片技术Gen 4 SiC MOSFET (RM)
特性Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Electric Vehicle chargingEnergy Storage SystemsSolarUPS
变体HPTP

一般规格

特性
毛重0.058 千克
净重0.038 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk100mh120rm04ete2-m05-24923540vm05">SK100MH120RM04ETE2-M05</a><a href="/products/p/sk100mh120rm04ete2-m07-24923540vm07">SK100MH120RM04ETE2-M07</a>
产品变体介绍The SK100MH120RM04ETE2-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime.
产品变体简要介绍Module + High Performance Thermal Paste (HPTP)