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24923530

SK100MH120RM04ETE1

SEMITOP E1

产品规格

特性
产品状态In Production New
原产地Italy
电流89 A
电压1200 V
拓扑H-Bridge
产品线SEMITOP
外壳SEMITOP E1
尺寸63x34x12
技术SiC MOSFET
芯片技术Gen 4 SiC MOSFET (RM)
特性Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
典型应用Electric Vehicle chargingEnergy Storage SystemsSolarUPS
原料号24923530

一般规格

特性
毛重0.037 千克
净重0.022 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/sk100mh120rm04ete1-m05-24923530vm05">SK100MH120RM04ETE1-M05</a><a href="/products/p/sk100mh120rm04ete1-m07-24923530vm07">SK100MH120RM04ETE1-M07</a>