22896110
SKM200GB12F4SiC3
SEMITRANS 3
22896110
Product specifications
Characteristic | Value |
|---|---|
| Type | SEMITRANS 3 |
| チップ技術 | SiC Diode + IGBT 4 fast (Trench) |
| トポロジー | Half-Bridge |
| ハウジング | SEMITRANS 3 |
| 代表的なアプリケーション | AC inverter drivesUPSElectronic weldersDC/DC converters |
| 原産国 | Slovakia |
| 寸法 | 106x62x31 |
| 技術 | Hybrid SiC |
| 旧部品番号 | 22896110 |
| 特徴 | IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532With integrated gate resistorFor higher switching frequencies |
| 製品の状態 | In Production New |
| 製品ライン | SEMITRANS |
| 電圧 (V) | 1200 V |
| 電流 (A) | 200 A |
General specifications
Characteristic | Value |
|---|---|
| 総重量 | 0.32 Kilogram |
| 正味重量 | 0.31 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |