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24922530VM05

SK80MB120CR03TE1-M05

SEMITOP E1, HPTP

製品仕様

特徴
製品の状態In Production New
原産国Italy
電流 (A)100 A
電圧 (V)1200 V
トポロジーHalf-Bridge
製品ラインSEMITOP
ハウジングSEMITOP E1
寸法63x34x12
技術SiC MOSFET
チップ技術Gen 3 SiC MOSFET (WS)
特徴Optimized design for superior thermal performanceVery low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
代表的なアプリケーションSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives

一般仕様

特徴
総重量0.022 Kilogram
正味重量0.022 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

特徴
Variants<a href="/products/p/sk80mb120cr03te1-m05-24922530vm05">SK80MB120CR03TE1-M05</a><a href="/products/p/sk80mb120cr03te1-m07-24922530vm07">SK80MB120CR03TE1-M07</a>
バリアントHPTP
分類の簡単な説明Module + High Performance Thermal Paste (HPTP)
分類の説明The SK80MB120CR03TE1-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime.