
22894260VM07
SKM800GB12M7-M07
SEMITRANS 3, HP-PCM
22894260VM07
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 106x62x31 |
| Chip Technologie | IGBT M7 |
| Eigenschaften | V<sub>CE(sat)</sub> with positive temperature coefficientFast and soft switching inverse CAL7 diodesHigh overload capabilityLow loss high density IGBT´sLarge clearance (10 mm) and creepage distances (20 mm)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532 |
| Gehäuse | SEMITRANS 3 |
| Herkunftsland | Slovakia |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 800 A |
| Technologie | IGBT |
| Topologie | Half-Bridge |
| Typische Anwendungsgebiete | AC inverter drivesUPSSolar energyEnergy storage |
| Variante | HP-PCM |
| Varianten Beschreibung | The SKM800GB12M7-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Varianten Kurzbeschreibung | Module + High Performance Phase Change Material (HP-PCM) |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |