22892013
SKM75GB12V
SEMITRANS 2
22892013
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 94x34x30 |
| Chip Technologie | V-IGBT |
| Ehemalige Teilenummer | 22892013 |
| Eigenschaften | V-IGBT = 6. Generation Trench V-IGBT (Fuji)CAL4 = Soft switching 4. Generation CAL-diodeInsulated copper baseplate using DBC technology (Direct Bonded Copper)Increased power cycling capabilityWith integrated gate resistorUL recognized, file no. E63532Lowest switching losses at High di/dt |
| Gehäuse | SEMITRANS 2 |
| Herkunftsland | Slovakia |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production |
| Spannung | 1200 V |
| Stromstärke (A) | 75 A |
| Technologie | IGBT |
| Topologie | Half-Bridge |
| Typ | SEMITRANS 2 |
| Typische Anwendungsgebiete | AC inverter drivesUPSElectronic welders |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.17 Kilogramm |
| Nettogewicht | 0.16 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |