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22892092VM07

SKM600GB12E4-M07

SEMITRANS 3, HP-PCM

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)106x62x31
Chip TechnologieIGBT 4 (Trench)
EigenschaftenIGBT4 = 4th generation medium fast trench IGBT (Infineon)CAL4 = Soft switching 4th generation CAL-diodeInsulated copper baseplate using DBC technology (Direct Bonded Copper)Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies up to 12kHzUL recognized, file no. E63532
GehäuseSEMITRANS 3
HerkunftslandSlovakia
ProduktlinieSEMITRANS
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)600 A
TechnologieIGBT
TopologieHalf-Bridge
TypeSEMITRANS 3
Typische AnwendungsgebieteAC inverter drivesUPS
Variant DescriptionThe SKM600GB12E4-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.
Variant Short DescriptionModule + High Performance Phase Change Material (HP-PCM)
VarianteHP-PCM

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.32 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm