21919770
SKM500MB120SC
SEMITRANS 3
21919770
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 106x62x31 |
| Chip Technologie | Gen 2 SiC MOSFET (RM) |
| Ehemalige Teilenummer | 21919770 |
| Eigenschaften | Full Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)Insulated copper baseplate using DBC technology (Direct Bonded Copper)UL recognized, file no. E63532 |
| Gehäuse | SEMITRANS 3 |
| Herkunftsland | Italy |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production |
| Spannung | 1200 V |
| Stromstärke (A) | 485 A |
| Technologie | SiC MOSFET |
| Topologie | Half-Bridge |
| Type | SEMITRANS 3 |
| Typische Anwendungsgebiete | High frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Vorschlag 65 | Cancer and Reproductive Harm |