22896050VM04
SKM200GB12F4-M04
SEMITRANS 3, HALA P8
22896050VM04
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 106x62x31 |
| Chip Technologie | IGBT 4 High Speed (Trench) |
| Eigenschaften | High speed trench and field-stop IGBTCAL4 ultra-fast = soft switching 4. generation CAL-diodeInsulated copper baseplate using DBC technology (Direct Bonded Copper)Increased power cycling capabilityFor higher switching frequencies above 15kHzUL recognized, file no. E63532 |
| Gehäuse | SEMITRANS 3 |
| Herkunftsland | Slovakia |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 200 A |
| Technologie | IGBT |
| Topologie | Half-Bridge |
| Type | SEMITRANS 3 |
| Typische Anwendungsgebiete | UPSElectronic weldersInductive heatingSwitched mode power supplies |
| Variant Description | The SKM200GB12F4-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + Phase Change Material HALA P8 |
| Variante | HALA P8 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |