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22892067VM07

SKM200GB12E4-M07

SEMITRANS 3, HP-PCM

*Konto erforderlich

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production
HerkunftslandSlovakia
Stromstärke (A)200 A
Spannung1200 V
TopologieHalf-Bridge
ProduktlinieSEMITRANS
GehäuseSEMITRANS 3
Abmessungen (LxBxH)106x62x31
TechnologieIGBT
Chip TechnologieIGBT 4 (Trench)
EigenschaftenIGBT4 = 4th generation medium fast trench IGBT (Infineon)CAL4 = Soft switching 4th generation CAL-diodeInsulated copper baseplate using DBC technology (Direct Bonded Copper)Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies up to 12kHzUL recognized, file no. E63532
Typische AnwendungsgebieteAC inverter drivesUPS

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.32 Kilogramm
Nettogewicht0.31 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHP-PCM
Varianten BeschreibungThe SKM200GB12E4-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler.
Varianten KurzbeschreibungModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/skm200gb12e4-m04-22892067vm04">SKM200GB12E4-M04</a><a href="/products/p/skm200gb12e4-m07-22892067vm07">SKM200GB12E4-M07</a><a href="/products/p/skm200gb12e4-22892067">SKM200GB12E4</a>