22892067VM04
SKM200GB12E4-M04
SEMITRANS 3, HALA P8
22892067VM04
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production |
| Herkunftsland | Slovakia |
| Stromstärke (A) | 200 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 3 |
| Abmessungen (LxBxH) | 106x62x31 |
| Technologie | IGBT |
| Chip Technologie | IGBT 4 (Trench) |
| Eigenschaften | IGBT4 = 4th generation medium fast trench IGBT (Infineon)CAL4 = Soft switching 4th generation CAL-diodeInsulated copper baseplate using DBC technology (Direct Bonded Copper)Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies up to 12kHzUL recognized, file no. E63532 |
| Typische Anwendungsgebiete | AC inverter drivesUPS |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HALA P8 |
| Varianten Beschreibung | The SKM200GB12E4-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. During very first operation, the PCM starts to flow, spread out and fill the gaps between module and cooler. |
| Varianten Kurzbeschreibung | Module + Phase Change Material HALA P8 |
| Variants | <a href="/products/p/skm200gb12e4-m04-22892067vm04">SKM200GB12E4-M04</a><a href="/products/p/skm200gb12e4-m07-22892067vm07">SKM200GB12E4-M07</a><a href="/products/p/skm200gb12e4-22892067">SKM200GB12E4</a> |