22896120
SKM200GAL12F4SiC3
SEMITRANS 3
22896120
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 106x62x31 |
| Chip Technologie | SiC Diode + IGBT 4 fast (Trench) |
| Ehemalige Teilenummer | 22896120 |
| Eigenschaften | IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532With integrated gate resistorFor higher switching frequencies |
| Gehäuse | SEMITRANS 3 |
| Herkunftsland | Slovakia |
| Produktlinie | SEMITRANS |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 200 A |
| Technologie | Hybrid SiC |
| Topologie | Chopper/Booster |
| Typ | SEMITRANS 3 |
| Typische Anwendungsgebiete | AC inverter drivesUPSElectronic weldersDC/DC converters |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |