230B8172
SKM150GB12M7X
SEMITRANS 2, No accessory
230B8172
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | Sample Status |
| Herkunftsland | Slovakia |
| Stromstärke (A) | 150 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 2 |
| Abmessungen (LxBxH) | 94x34x30 |
| Technologie | IGBT |
| Chip Technologie | IGBT M7 |
| Features | V<sub>CE(sat)</sub> with positive temperature coefficientHigh overload capabilityLow loss high density IGBT´sFast & soft switching inverse CAL diodesLarge clearance (10 mm) and creepage distances (20 mm)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532With H<sub>2</sub>S protectionWith improved humidity robustness |
| Additional features | SemiSeal |
| Typische Anwendungsgebiete | AC inverter drivesUPSElectronic welders |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.17 Kilogramm |
| Nettogewicht | 0.16 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | No accessory |