24923770
SK50MH120RM04ETE1
SEMITOP E1
24923770
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 63x34x12 |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Ehemalige Teilenummer | 24923770 |
| Eigenschaften | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Gehäuse | SEMITOP E1 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 49 A |
| Technologie | SiC MOSFET |
| Topologie | H-Bridge |
| Typ | SEMITOP E1 |
| Typische Anwendungsgebiete | Electric Vehicle chargingEnergy Storage SystemsSolarUPS |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.037 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |