24922220VM05
SK35DGDL12T4ETE2V1-M05
SEMITOP E2, HPTP
24922220VM05
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 63x57x12 |
| Chip Technologie | IGBT 4 (Trench) |
| Eigenschaften | Optimized design for superior thermal performancesLow inductive designPress-Fit contact technology1200V Trench IGBT4 (T4)Robust and soft switching CAL4F diode technologyIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Gehäuse | SEMITOP E2 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | In Production |
| Spannung | 1200 V |
| Stromstärke (A) | 35 A |
| Technologie | IGBT |
| Topologie | CIB |
| Type | SEMITOP E2 |
| Typische Anwendungsgebiete | Motor drivesAir conditioningAuxiliary Inverters |
| Variant Description | The SK35DGDL12T4ETE2V1-M05 is a 1200 V IGBT module and comes with a pre-applied 2.8mm height slim pressure lid and High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP provides top-tier thermal performance with optimized filler content. |
| Variant Short Description | Module + High Performance Thermal Paste (HPTP) |
| Variante | HPTP |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.055 Kilogramm |
| Nettogewicht | 0.035 Kilogramm |
| Vorschlag 65 | Cancer and Reproductive Harm |