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24923280VM05

SK35DGD12T7ETE2-M05

SEMITOP E2, HPTP

Produktdaten

Eigenschaften
Wert
ProduktstatusIn Production New
HerkunftslandItaly
Stromstärke (A)35 A
Spannung1200 V
TopologieCI
ProduktlinieSEMITOP
GehäuseSEMITOP E2
Abmessungen (LxBxH)63x57x12
TechnologieIGBT
Chip TechnologieIGBT T7
EigenschaftenOptimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V Generation 7 IGBT (T7)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typische AnwendungsgebieteMotor drivesAir conditioningAuxiliary Inverters

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.055 Kilogramm
Nettogewicht0.035 Kilogramm
Proposition 65Cancer and Reproductive Harm

Variant information

Eigenschaften
Wert
VarianteHPTP
Varianten BeschreibungThe SK35DGD12T7ETE2-M05 is a 1200 V IGBT module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime.
Varianten KurzbeschreibungModule + High Performance Thermal Paste (HPTP)
Variants<a href="/products/p/sk35dgd12t7ete2-m05-24923280vm05">SK35DGD12T7ETE2-M05</a><a href="/products/p/sk35dgd12t7ete2-24923280">SK35DGD12T7ETE2</a>