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24923260VM05

SK25DGD12T7ETE1-M05

SEMITOP E1, HPTP

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)63x34x12
Chip TechnologieIGBT T7
EigenschaftenOptimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V Generation 7 IGBT (T7)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532
GehäuseSEMITOP E1
HerkunftslandItaly
ProduktlinieSEMITOP
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)25 A
TechnologieIGBT
TopologieCI
TypeSEMITOP E1
Typische AnwendungsgebieteMotor drivesAir conditioningAuxiliary Inverters
Variant DescriptionThe SK25DGD12T7ETE1-M05 is a 1200 V IGBT module and comes with a pre-applied 2.8mm height slim pressure lid and High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP provides top-tier thermal performance with optimized filler content.
Variant Short DescriptionModule + High Performance Thermal Paste (HPTP)
VarianteHPTP

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.022 Kilogramm
Nettogewicht0.022 Kilogramm
Vorschlag 65Cancer and Reproductive Harm