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24922590VM05

SK250MB120CR03TE2-M05

SEMITOP E2, HPTP

Produktdaten

Eigenschaften
Wert
Abmessungen (LxBxH)63x57x12
Chip TechnologieGen 3 SiC MOSFET (WS)
EigenschaftenOptimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
GehäuseSEMITOP E2
HerkunftslandItaly
ProduktlinieSEMITOP
ProduktstatusIn Production New
Spannung1200 V
Stromstärke (A)267 A
TechnologieSiC MOSFET
TopologieHalf-Bridge
TypeSEMITOP E2
Typische AnwendungsgebieteSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives
VarianteHPTP

Allgemeine Spezifikationen

Eigenschaften
Wert
Bruttogewicht0.058 Kilogramm
Nettogewicht0.038 Kilogramm
Vorschlag 65Cancer and Reproductive Harm