230B9714
SK200MB120RM04TE2-M05
SEMITOP E2, HPTP
230B9714
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 179 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E2 |
| Abmessungen (LxBxH) | 63x57x12 |
| Technologie | SiC MOSFET |
| Chip Technologie | Gen 4 SiC MOSFET (RM) |
| Features | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.058 Kilogramm |
| Nettogewicht | 0.038 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HPTP |
| Varianten Beschreibung | The SK200MB120RM04TE2-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Varianten Kurzbeschreibung | Module + High Performance Thermal Paste (HPTP) |
| Variants | <a href="/de-de/products/p/sk200mb120rm04te2-24923990">SK200MB120RM04TE2</a><a href="/de-de/products/p/sk200mb120rm04te2-m05-230b9714">SK200MB120RM04TE2-M05</a><a href="/de-de/products/p/sk200mb120rm04te2-m07-230b6958">SK200MB120RM04TE2-M07</a> |