24923790
SK10DGDL12RAETE1
SEMITOP E1
24923790
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production New |
| Herkunftsland | Italy |
| Stromstärke (A) | 10 A |
| Spannung | 1200 V |
| Topologie | CIB |
| Produktlinie | SEMITOP |
| Gehäuse | SEMITOP E1 |
| Abmessungen (LxBxH) | 63x34x12 |
| Technologie | IGBT |
| Chip Technologie | RGA |
| Eigenschaften | Optimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V RGA IGBT (RA)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typische Anwendungsgebiete | Motor drivesAir conditioningAuxiliary Inverters |
| Ehemalige Teilenummer | 24923790 |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.037 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variants | <a href="/products/p/sk10dgdl12raete1-m07-24923790vm07">SK10DGDL12RAETE1-M07</a><a href="/products/p/sk10dgdl12raete1-24923790">SK10DGDL12RAETE1</a> |