24923200VM05
SK10DGD12T7ETE1-M05
SEMITOP E1, HPTP
24923200VM05
Produktdaten
Eigenschaften | Wert |
|---|---|
| Abmessungen (LxBxH) | 63x34x12 |
| Chip Technologie | IGBT T7 |
| Eigenschaften | Optimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V Generation 7 IGBT (T7)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Gehäuse | SEMITOP E1 |
| Herkunftsland | Italy |
| Produktlinie | SEMITOP |
| Produktstatus | In Production New |
| Spannung | 1200 V |
| Stromstärke (A) | 10 A |
| Technologie | IGBT |
| Topologie | CI |
| Type | SEMITOP E1 |
| Typische Anwendungsgebiete | Motor drivesAir conditioningAuxiliary Inverters |
| Variant Description | The SK10DGD12T7ETE1-M05 is a 1200 V IGBT module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Variant Short Description | Module + High Performance Thermal Paste (HPTP) |
| Variante | HPTP |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.022 Kilogramm |
| Nettogewicht | 0.022 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |